Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13706
Title: Development of in-situ techniques for predicting PEB temperature
Authors: LI FENG YIING, REGINALD
Keywords: post-exposure bake, temperature measurement, in-situ, sensor, uniformity, thermal contact
Issue Date: 13-Jan-2004
Source: LI FENG YIING, REGINALD (2004-01-13). Development of in-situ techniques for predicting PEB temperature. ScholarBank@NUS Repository.
Abstract: The minimum feature size that can be fabricated depends on the post-exposure bake (PEB) temperature because chemically amplified resist, used by DUV lithography, is very temperature sensitive. This thesis aims at developing techniques for improving temperature measurement accuracy so that better closed loop control of wafer temperature can be achieved. As varying level of thermal contact between sensor and wafer is a main source of measurement error, the sensor condition is ascertained in-situ via the Loop Current Step Response (LCSR) test. The LCSR test result is then combined with a prediction algorithm to minimize measurement errors. Experimental results are presented to demonstrate the feasibility of the proposed techniques.
URI: http://scholarbank.nus.edu.sg/handle/10635/13706
Appears in Collections:Master's Theses (Open)

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