Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13656
Title: Theory and modelling of spin-dependent tunnelling
Authors: WANG XIAOQIANG
Keywords: spin-dependent tunneling, coherent tunneling, single electron tunneling, magnetic tunneling junction, single electron transistor, tunneling magnetores
Issue Date: 26-Feb-2004
Source: WANG XIAOQIANG (2004-02-26). Theory and modelling of spin-dependent tunnelling. ScholarBank@NUS Repository.
Abstract: We first study the spin-dependent tunneling with single electron effects in a ferromagnetic double junction system. Single-electron charging effects are incorporated by considering the change in the island potential due to a discrete charge e. The resulting current can be modulated not only by the bias voltage, but also the gate voltage. Secondly we analyze the tunneling resistance in a ferromagnetic single electron transistor dynamically dependent on various parameters, based on the two-band free electron model. The barrier thickness, temperature, barrier height and material type affect the tunneling resistance, which in turn modulates the tunneling currents and tunneling magnetoresistance.
URI: http://scholarbank.nus.edu.sg/handle/10635/13656
Appears in Collections:Master's Theses (Open)

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