Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13653
Title: Large signal modeling of GaAs MESFET device
Authors: MA JINGYI
Keywords: GaAs MESFET, Large Signal Model, Small Signal Model
Issue Date: 14-Feb-2004
Source: MA JINGYI (2004-02-14). Large signal modeling of GaAs MESFET device. ScholarBank@NUS Repository.
Abstract: Accurate GaAs MESFET device models are critical for the success of circuit design, and they are in great demand. In this work, a detailed study of GaAs MESFET large signal models for nonlinear microwave circuit design is carried out. As a result, a new nonlinear model is proposed. It consists of novel empirical expressions for the prediction of drain current I-V as well as gate charge characteristics. It is capable of accurately modeling the device nonlinear behavior at different operating regions. In particular, the new model provides superior accuracy at those regions where some conventional models fail. The small signal modeling methodology is also investigated. An improved model for parasitic capacitances extraction is proposed. Unlike some conventional models, the resulting Cpd remains constant under different bias voltage. Different methods for extracting small signal equivalent circuit parameters are studied, and a reliable extraction procedure is proposed. Detailed model verification is discussed.
URI: http://scholarbank.nus.edu.sg/handle/10635/13653
Appears in Collections:Ph.D Theses (Open)

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