Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13571
Title: Reliability and characterization for deep sub-micron CMOS devices
Authors: CHEN GANG
Keywords: CMOS, reliability, characterization, interface state, hot carrier, NBTI
Issue Date: 9-Dec-2003
Source: CHEN GANG (2003-12-09). Reliability and characterization for deep sub-micron CMOS devices. ScholarBank@NUS Repository.
Abstract: The DCIV technique was improved and its application extended to devices with direct tunneling oxide (Chapter 2), and the TTT method was developed to monitor source/drain region defect buildup (Chapter 3). the DCIV technique further showed its unique advantage to distinguish interface traps over the channel area or around the drain area. An interesting phenomenon regarding interface trap generation and recombination/migration was reported (Chapter 4). Hot carrier effect was studied for devices with direct tunneling gate oxide (Chapter 5). As interface trap creation dominates the device degradation, the DCIV method was used to investigate the degradation mechanism. A bottleneck for modern MOS devices is NBTI, which may become the scaling a??killera?? in terms of reliability. Fortunately, the finding of DNBTI, to a large extent, will alleviate the concern of this kind of degradation (Chapter 6).
URI: http://scholarbank.nus.edu.sg/handle/10635/13571
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chapter3.pdf139.27 kBAdobe PDF

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chapter6.pdf102.4 kBAdobe PDF

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Appendix.pdf9.33 kBAdobe PDF

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