Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13568
Title: Study of impurity free quantum well intermixing and its application to photonic integrated circuit
Authors: TENG JINGHUA
Keywords: quantum well intermixing, photonic integrated circuits
Issue Date: 16-Oct-2003
Source: TENG JINGHUA (2003-10-16). Study of impurity free quantum well intermixing and its application to photonic integrated circuit. ScholarBank@NUS Repository.
Abstract: This thesis covers several aspects of impurity free vacancy enhanced quantum well (QW) intermixing in GaAs/AlGaAs and InGaAs/GaAs quantum well structures. Spin-on silica film and thermal oxidation of GaAs were shown to be effective in enhancing the QW intermixing. Control of bandgap tuning was realized by varying the thickness of a buried Al or Ge thin interlayer. Interdiffusion coefficient is obtained by comparing the measured photoluminescence peak energy with the calculated transition energy levels. Monolithically integrated multi-wavelength lasers and a two-wavelength laser incorporating a Y junction coupler and an isolator were successfully fabricated using the QW intermixing technology. Improved carrier transport was observed in the intermixed QW laser structure having multi-quantum-well cladding layers. Blueshift of the bandgap in In0.2Ga0.8N/GaN single quantum well was observed at thermal annealing temperatures below 1000 Celsius degrees and is explained by the spatial redistribution of atomic In and Ga in the QW.
URI: http://scholarbank.nus.edu.sg/handle/10635/13568
Appears in Collections:Ph.D Theses (Open)

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