Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13550
Title: Quantum mechanical simulation of a metal-oxide-semiconductor system
Authors: ZHENG JIANXIN
Keywords: QM effects, MOSFET, C-V, wave function penetration
Issue Date: 12-Oct-2003
Source: ZHENG JIANXIN (2003-10-12). Quantum mechanical simulation of a metal-oxide-semiconductor system. ScholarBank@NUS Repository.
Abstract: Quantum mechanical (QM) effects have become an essential part of modern device physics when metal-oxide-semiconductor (MOS) devices are down-scaled to the deep submicrometer regime. In this project, a QM simulator, based on the self-consistent solution of Schr??dinger and Poisson equations, has been developed using FORTRAN 90. This simulator is able to simulate the MOS device operating from accumulation to the strong inversion region. Although the simulator was initially designed for MOS devices, it can be easily adapted for other metal-insulator-silicon (MIS) systems as well. QM effects were investigated and results were compared with those calculated using the classical equations. The capacitance-voltage (C-V) curves obtained from the QM simulator developed in this work were compared and found to be in good agreement with those obtained from simulators that were developed by other universities or institutions (i.e., UCB, UTQuant, NEMO and NCSU). The wavefunction penetration effect was also investigated in this work. It was found that the wave function penetration has negligible impact on the C-V curves except when the oxide thickness is smaller than 10??.
URI: http://scholarbank.nus.edu.sg/handle/10635/13550
Appears in Collections:Master's Theses (Open)

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