Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/135190
Title: GROWTH AND SIMULATION STUDY OF GAN ON V-GROOVE PATTERNED SILICON (100) SUBSTRATES AND ITS APPLICATIONS
Authors: LI SHIJU
Keywords: GaN-on-Si, MOCVD growth of GaN, epitaxial lateral overgrowth, CFD simulation, quantum well intermixing, photon generation
Issue Date: 18-Aug-2016
Source: LI SHIJU (2016-08-18). GROWTH AND SIMULATION STUDY OF GAN ON V-GROOVE PATTERNED SILICON (100) SUBSTRATES AND ITS APPLICATIONS. ScholarBank@NUS Repository.
Abstract: In this thesis, the growth of GaN on V-groove patterned Si (100) substrates is performed in an EMCORE D180 MOCVD system. It is found that single-facet growth of GaN is achieved when V-grooves are placed perpendicular to the precursor flow direction. A simulation study is performed in COMSOL software to elucidate the impact of V-grooves on laminar flow and heat transfer within the reactor. It is found that velocity of precursor over the V-grooves would be slower than that over the flat substrate. Furthermore, the presence of V-grooves on Si substrate will cause the pressure over one facet to increase, linking to an increase in gas flux and adsorption rate. Lastly, a novel single-photon emitting and coupling structure fabricated within cascaded V-grooves on Si substrate is proposed, consisting of an InGaN / GaN quantum dot fabricated within a single quantum well by intermixing, and connected to an optical fiber.
URI: http://scholarbank.nus.edu.sg/handle/10635/135190
Appears in Collections:Master's Theses (Open)

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