Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13465
Title: Study on polycrystallization, oxidation and formation of GE nanocrystals from silicon germanium films
Authors: LEOY CHIN CHYE
Keywords: Silicon, Germanium, Nanocrystal, Polycrystallisation, Oxidation
Issue Date: 31-Dec-2003
Source: LEOY CHIN CHYE (2003-12-31). Study on polycrystallization, oxidation and formation of GE nanocrystals from silicon germanium films. ScholarBank@NUS Repository.
Abstract: This thesis deals with the polycrystallization and oxidation mechanism study of r.f. sputtered silicon germanium films (Ge concentration = 0.12, 0.28 and 0.46) and their application in the formation of Ge nanocrystals embedded in a silicon dioxide matrix.The polycrystallization and oxidation study was carried out using various techniques such as X-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared spectroscopy as a function of annealing or oxidation time and temperature.For dry oxidation, the TEM results revealed a polycrystalline germanium rich layer under the growing silicon dioxide. On the other hand, wet oxidation would yield an amorphous layer of mixed oxides.We had learnt that the state of wet oxidation before rapid thermal annealing is crucial in determining if germanium nanocrystals would consequently form. Electrical measurements of samples with nanocrystals yielded hystersis while samples without nanocrystals showed no hystersis. This indicated that the presence of nanocrystals was fundamental for the system to have charge storage property.
URI: http://scholarbank.nus.edu.sg/handle/10635/13465
Appears in Collections:Master's Theses (Open)

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