Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/134477
Title: GERMANIUM-TIN INFRARED PHOTODETECTORS: DEVICE DESIGN, PROCESS DEVELOPMENT, AND TECHNOLOGY DEMONSTRATION
Authors: DONG YUAN
Keywords: Germanium-tin, near-infrared, mid-infrared, photodetector, APD, photonic device
Issue Date: 1-Aug-2016
Source: DONG YUAN (2016-08-01). GERMANIUM-TIN INFRARED PHOTODETECTORS: DEVICE DESIGN, PROCESS DEVELOPMENT, AND TECHNOLOGY DEMONSTRATION. ScholarBank@NUS Repository.
Abstract: Germanium-tin (Ge1−xSnx) is a versatile group IV material system which has attracted great research attention in recent years for both electronic and photonic device applications. Ge1−xSnx significantly expands the optical absorption range, and enhances the absorption coefficient of Ge. This makes Ge1−xSnx a very promising group IV material for near-infrared (NIR, 0.78 – 2 μm) and mid-infrared (MIR, 2 – 5 μm) photodetectors. This thesis work focuses on the process development, performance enhancement, and technology demonstration of Ge1−xSnx NIR and MIR photodetectors. First, the wet and dry etching processes for Ge1−xSnx alloys with various Sn compositions were investigated. Next, a Si surface passivation technique was proposed and experimentally demonstrated to suppress the dark current (Idark) of a Ge0.95Sn0.05-on-Si p-i-n photodiode. Finally, Ge1−xSnx/Si avalanche photodiodes (APDs) were first demonstrated for both NIR and MIR photodetection. The optical responsivity of the photodetectors was improved significantly due to the avalanche multiplication gain.
URI: http://scholarbank.nus.edu.sg/handle/10635/134477
Appears in Collections:Ph.D Theses (Open)

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