Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/134351
Title: N-POLAR III-NITRIDE: MOCVD GROWTH, CHARACTERIZATIONS, AND DEVICES
Authors: LI CHENGGUO
Keywords: N-polarity, III-nitride, MOCVD
Issue Date: 18-Aug-2016
Citation: LI CHENGGUO (2016-08-18). N-POLAR III-NITRIDE: MOCVD GROWTH, CHARACTERIZATIONS, AND DEVICES. ScholarBank@NUS Repository.
Abstract: N-polar III-nitrides have received considerable attention to their potentials to boost the performances of light emitting diodes and high electron mobility transistors. However, owing to the poorer material qualities of N-polar III-nitride films, the performance of N-polar devices is still inferior to that of the current Ga-polar technology. This thesis contributes an effort in the epitaxial growth, characterizations and a device application of N-polar III-nitride materials. In particular, it investigates (1) a control of buffer polarity in the growth of N-polar films on sapphire substrates, (2) the anisotropic material properties of N-polar films grown on offcut substrates, (3) the material quality improvement of N-polar InGaN/GaN quantum wells using a flow-modulation method, and (4) a theoretical study of an application of N-polar materials in a novel light emitting diode structure.
URI: http://scholarbank.nus.edu.sg/handle/10635/134351
Appears in Collections:Ph.D Theses (Open)

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