Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13335
Title: A study of the effects of ultralow energy secondary ion mass spectrometry (SIMS) on surface transient and depth resolution
Authors: AB RAZAK BIN CHANBASHA
Keywords: Ultralow-energy, SIMS, surface transient, depth resolution
Issue Date: 15-Aug-2007
Source: AB RAZAK BIN CHANBASHA (2007-08-15). A study of the effects of ultralow energy secondary ion mass spectrometry (SIMS) on surface transient and depth resolution. ScholarBank@NUS Repository.
Abstract: The objective of this research is to understand the trends, characteristic behaviour and processes involved with the use of ultralow-energy SIMS. Obtaining such information will aid method development and optimizing parameters for accurate depth profiling of ultrashallow junctions and ultrathin films.This study examines comprehensively, the dependence of sputter rate, transient width, dynamic range and depth resolution as a function of O2+ and Cs+ primary ion energy (Ep < 1 keV) and incidence angles between 0-70o to a depth of 120 nm. The dependence of sputter rate and transient width as a function of primary ion energy and incident angles are studied. Sputter rate variations with depth are also evaluated to determine the accuracy of using average sputter rates for depth calibrations. The relationship between improvements in depth resolution with decreasing Ep and increasing incident angle is also established. Contributions from roughening and atomic mixing to the depth resolution of delta-layers are also discussed using the mixing-roughness-information (MRI) depth model.
URI: http://scholarbank.nus.edu.sg/handle/10635/13335
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