Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13239
Title: Study on high mobility channel transistors for future sub-10 nm CMOS technology
Authors: GAO FEI
Keywords: MOSFET, Ge, GaAs, High-k, Metal Gate, Schottky
Issue Date: 22-Apr-2008
Source: GAO FEI (2008-04-22). Study on high mobility channel transistors for future sub-10 nm CMOS technology. ScholarBank@NUS Repository.
Abstract: Driven by consumersb demand for IC (Integrated Circuits) chips with higher performance but lower cost, the dimension of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has been scaled continuously, following the Moorb s law. However, further scaling of conventional MOSFET with poly-Si/SiON/Si-substrate structure is approaching its physical limits: intolerable high gate leakage current, undesirable poly-Si gate depletion and difficulties in controlling the short channel effects. MOSFET made on high mobility channel materials, such as Ge and GaAs, with high-k/metal gate stack, is a possible alternative to extend the Moorb s law. Hence, in this thesis, several technical aspects regarding the high-mobility channel MOSFET are explored.
URI: http://scholarbank.nus.edu.sg/handle/10635/13239
Appears in Collections:Ph.D Theses (Open)

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