Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/131604
Title: Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD
Authors: Sun, W.H.
Chen, J.L.
Wang, L.S.
Chua, S.J. 
Issue Date: 2003
Citation: Sun, W.H., Chen, J.L., Wang, L.S., Chua, S.J. (2003). Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD. Materials Research Society Symposium - Proceedings 798 : 387-390. ScholarBank@NUS Repository.
Abstract: AlN self-assembled quantum dots (QDs) with high density of ∼4.4×10 10/cm 2 on Si(111) substrates have been grown by low-pressure chemical vapor deposition under a very low V/III ratio of 350. We found that using AlN-QD/AlN buffer two-inch GaN epilayers without cracks were grown, indicating the underlying quantum dots play a crucial role in relaxing the stain of GaN epilayer. The quality and morphology were investigated by atom force microscopy, transmission electron microscopy, X-ray diffraction and optical microscope.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/131604
ISSN: 02729172
Appears in Collections:Staff Publications

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