Please use this identifier to cite or link to this item:
|Title:||Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD|
|Source:||Sun, W.H., Chen, J.L., Wang, L.S., Chua, S.J. (2003). Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD. Materials Research Society Symposium - Proceedings 798 : 387-390. ScholarBank@NUS Repository.|
|Abstract:||AlN self-assembled quantum dots (QDs) with high density of ∼4.4×10 10/cm 2 on Si(111) substrates have been grown by low-pressure chemical vapor deposition under a very low V/III ratio of 350. We found that using AlN-QD/AlN buffer two-inch GaN epilayers without cracks were grown, indicating the underlying quantum dots play a crucial role in relaxing the stain of GaN epilayer. The quality and morphology were investigated by atom force microscopy, transmission electron microscopy, X-ray diffraction and optical microscope.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 14, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.