Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13051
Title: Growth and characterization of Oxide thin films on silicon by pulsed laser deposition
Authors: NING MIN
Keywords: oxide film, silicon, buffer layer, Pulsed laser deposition, structure and properties, multiferroic
Issue Date: 16-Feb-2008
Source: NING MIN (2008-02-16). Growth and characterization of Oxide thin films on silicon by pulsed laser deposition. ScholarBank@NUS Repository.
Abstract: Oxide films display a wide range of functionality and attracted great research interests due to their application in many fields. However, the growth of high quality oxide films on silicon is difficult because of interfacial chemical diffusion and large lattice mismatch. So in this thesis, MgO films were firstly fabricated as a template on silicon. Then, with the help of the MgO buffer layer, (100)-textured CoFe2O4 films were obtained on silicon with large magnetic anisotropy. In addition, Ba-doped multiferroic BiFeO3 films were obtained on silicon with Pt buffer layer. Pulsed laser deposition (PLD) was used here for growing oxide films above, due to its high deposition efficiency and excellent control over the stiochiometry. The research was focused on studying the effect of growth conditions on the crystal structure and microstructure of those oxide films. Also the correlations between the structure and properties of these oxide films were studied further.
URI: http://scholarbank.nus.edu.sg/handle/10635/13051
Appears in Collections:Master's Theses (Open)

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