Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13035
Title: Hafnium oxide based high-k dielectric gate stack
Authors: LI QIN
Keywords: High-k dielectric,Metal/HfO2/semiconductor,Band alignment,Schottky barrier height,X-ray photoelectron spectroscopy,Density functional theory
Issue Date: 20-Feb-2008
Source: LI QIN (2008-02-20). Hafnium oxide based high-k dielectric gate stack. ScholarBank@NUS Repository.
Abstract: Metal/HfO2/semiconductor system is very promising to be used in future generation CMOS. In this work, we systematically studied metal/HfO2/semiconductor system using both experimental and theoretical methods. It includes: (1) Thermodynamic and thermal stability studies of HfO2/Si and (HfO2)1-x(Al2O3)x/Si stack. (2) Energy band alignments of HfO2/semiconductor, metal/HfO2, and RuO2/HfO2 interfaces. (3) Studies of the formation mechanism of Schottky barrier heights at metal gate/high-k dielectrics.The thermodynamic and thermal stability studies indicate that HfO2 is one of the most promising high-k gate dielectric candidates. Sufficient high band offsets of HfO2/semiconductor interfaces guarantees HfO2 as an effective carrier barrier for the channels. Ni and RuO2 are potential metal gate materials in PMOS devices integrated with HfO2 film. These studies are expected to provide valuable information on how to engineer HfO2 to be used as an alternative gate oxide to replace traditionally SiO2 and elucidate the mechanism at the interface from the physical perspective.
URI: http://scholarbank.nus.edu.sg/handle/10635/13035
Appears in Collections:Ph.D Theses (Open)

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