Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1374496
Title: Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodes
Authors: Chi, D.Z.
Mangelinck, D.
Lahiri, S.K.
Lee, P.S. 
Pey, K.L.
Issue Date: 21-May-2001
Citation: Chi, D.Z., Mangelinck, D., Lahiri, S.K., Lee, P.S., Pey, K.L. (2001-05-21). Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodes. Applied Physics Letters 78 (21) : 3256-3258. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1374496
Abstract: A comparative study of the I-V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I-V characteristics were observed for some of the diodes which were silicided with pure Ni at 700°C while good I-V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I-V characteristics is dominated by electron diffusion in the p- region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p+ region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi. © 2001 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/129504
ISSN: 00036951
DOI: 10.1063/1.1374496
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