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|Title:||On the use of local ideality factor obtained from effective carrier lifetime measurements|
|Authors:||Hameiri, Z. |
|Keywords:||Charge carrier density|
Charge carrier lifetime
|Citation:||Hameiri, Z.,McIntosh, K.R. (2013). On the use of local ideality factor obtained from effective carrier lifetime measurements. Conference Record of the IEEE Photovoltaic Specialists Conference : 1412-1416. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744408|
|Abstract:||Assessing the local ideality factor m is a useful approach to identify performance-limiting mechanisms in solar cells. Typically, m is extracted from the current-voltage curve of a completed solar cell and plotted as a function of voltage. In this study, m is extracted from photoluminescence measurements of the effective carrier lifetime and plotted against the minority carrier concentration Δn or the implied open-circuit voltage Voc i. It is shown that a plot of m(Δn) [or m(Voc i)] is a powerful way to analyze recombination processes within a silicon wafer, where its main advantage is that it can be determined from wafers that have neither metal contacts nor a p-n junction. © 2013 IEEE.|
|Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Appears in Collections:||Staff Publications|
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