Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssa.201001028
Title: Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs
Authors: Soh, C.B.
Liu, W.
Chua, S.J. 
Tan, R.J.N.
Ang, S.S.
Chow, S.Y.
Keywords: LEDs
MQWs
quantum dots
Issue Date: Jul-2011
Citation: Soh, C.B., Liu, W., Chua, S.J., Tan, R.J.N., Ang, S.S., Chow, S.Y. (2011-07). Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs. Physica Status Solidi (A) Applications and Materials Science 208 (7) : 1579-1581. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.201001028
Abstract: indium rich InGaN nanostructures grown by MOCVD were incorporated in InGaN/GaN quantum wells for long wavelength emission by optimizing the growth condition for the quantum dots (QDs) and InGaN quantum wells. The indium rich InGaN QDs were about 20 nm in diameter and 1.5 nm in height with a density of ∼1 × 10 10 cm -2. The InGaN nanostructures in quantum wells capped by AlN were insensitive to In out-diffusion due to formation of stable Al-N bonds and lower mobility of Al adatoms on the film surface at 780 °C. The piezeoelectric field in the active layers of the light emitting diodes (LEDs) was reduced with the AlN capped layer and minimal blueshift of the electroluminescence was observed as compared to conventional InGaN/GaN LEDs was noted. The energy band profile of strained AlN/InGaN/QDs/InGaN/GaN quantum well system was analyzed. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi (A) Applications and Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/128672
ISSN: 18626300
DOI: 10.1002/pssa.201001028
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