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|Title:||Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime|
|Keywords:||Charge carrier lifetime|
|Citation:||Blum, A.L.,Swirhun, J.S.,Sinton, R.A.,Yan, F.,Herasimenka, S.,Roth, T.,Lauer, K.,Haunschild, J.,Lim, B.,Bothe, K.,Hameiri, Z.,Seipel, B.,Xiong, R.,Dhamrin, M.,Murphy, J.D. (2013). Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime. Conference Record of the IEEE Photovoltaic Specialists Conference : 1396-1401. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744405|
|Abstract:||Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples. © 2013 IEEE.|
|Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Appears in Collections:||Staff Publications|
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