Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6744405
Title: Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
Authors: Blum, A.L.
Swirhun, J.S.
Sinton, R.A.
Yan, F.
Herasimenka, S.
Roth, T.
Lauer, K.
Haunschild, J.
Lim, B.
Bothe, K.
Hameiri, Z. 
Seipel, B.
Xiong, R.
Dhamrin, M.
Murphy, J.D.
Keywords: Charge carrier lifetime
Eddy currents
Photoconductivity
Silicon
Issue Date: 2013
Source: Blum, A.L.,Swirhun, J.S.,Sinton, R.A.,Yan, F.,Herasimenka, S.,Roth, T.,Lauer, K.,Haunschild, J.,Lim, B.,Bothe, K.,Hameiri, Z.,Seipel, B.,Xiong, R.,Dhamrin, M.,Murphy, J.D. (2013). Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime. Conference Record of the IEEE Photovoltaic Specialists Conference : 1396-1401. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744405
Abstract: Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples. © 2013 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/128554
ISBN: 9781479932993
ISSN: 01608371
DOI: 10.1109/PVSC.2013.6744405
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