Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4913299
Title: Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry
Authors: D'Costa, V.R. 
Yeo, Y.-C. 
Issue Date: 2015
Publisher: American Institute of Physics Inc.
Citation: D'Costa, V.R., Yeo, Y.-C. (2015). Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry. Journal of Applied Physics 117 (7). ScholarBank@NUS Repository. https://doi.org/10.1063/1.4913299
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/128146
ISSN: 00218979
DOI: 10.1063/1.4913299
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