Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization

Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/26/9/095202

DC Field	Value
dc.title	Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization
dc.contributor.author	Han C.
dc.contributor.author	Xiang D.
dc.contributor.author	Zheng M.
dc.contributor.author	Lin J.
dc.contributor.author	Zhong J.
dc.contributor.author	Haur Sow C.
dc.contributor.author	Chen W.
dc.date.accessioned	2016-09-20T01:42:20Z
dc.date.available	2016-09-20T01:42:20Z
dc.date.issued	2015
dc.identifier.citation	Han C., Xiang D., Zheng M., Lin J., Zhong J., Haur Sow C., Chen W. (2015). Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization. Nanotechnology 26 (9). ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/26/9/095202
dc.identifier.issn	9574484
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/127855
dc.publisher	Institute of Physics Publishing
dc.type	Article
dc.contributor.department	CHEMISTRY
dc.description.doi	10.1088/0957-4484/26/9/095202
dc.description.sourcetitle	Nanotechnology
dc.description.volume	26
dc.description.issue	9
dc.identifier.isiut	000349494600006
dc.published.state	published
Appears in Collections:	Staff Publications

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