Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2014.2387194
Title: Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor
Authors: Guo Y.
Zhang, X.
Low, K. L. 
Lam, K.-T. 
Yeo Y.-C. 
Liang, G. 
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Guo Y., Zhang, X., Low, K. L., Lam, K.-T., Yeo Y.-C., Liang, G. (2015). Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor. IEEE Transactions on Electron Devices 62 (3) : 788-794. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2387194
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/127349
ISSN: 189383
DOI: 10.1109/TED.2014.2387194
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