Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISSCC.2013.6487739
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dc.titleA 0.45V 100-channel neural-recording IC with sub-μW/channel consumption in 0.18μm CMOS
dc.contributor.authorHan, D.
dc.contributor.authorZheng, Y.
dc.contributor.authorRajkumar, R.
dc.contributor.authorDawe, G.
dc.contributor.authorJe, M.
dc.date.accessioned2016-07-08T07:20:00Z
dc.date.available2016-07-08T07:20:00Z
dc.date.issued2013
dc.identifier.citationHan, D., Zheng, Y., Rajkumar, R., Dawe, G., Je, M. (2013). A 0.45V 100-channel neural-recording IC with sub-μW/channel consumption in 0.18μm CMOS. Digest of Technical Papers - IEEE International Solid-State Circuits Conference 56 : 290-291. ScholarBank@NUS Repository. https://doi.org/10.1109/ISSCC.2013.6487739
dc.identifier.isbn9781467345132
dc.identifier.issn01936530
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/125316
dc.description.abstractConventional neural-recording systems face limitations in simultaneously achieving a good NEF and low power consumption [1-4]. This is because the input amplifier current consumption is dictated by an input-referred noise requirement that determines the system sensitivity, while the supply voltage is determined by a DR requirement at the analog recording chain output that limits the maximum achievable resolution of the A-to-D conversion. In this paper, a power-efficient neural-recording architecture using a DR-folding technique is presented to enable low-voltage operation without compromising the DR performance. The proposed architecture can operate with only half of the typically required supply voltage, which results in about 50% power reduction. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISSCC.2013.6487739
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentPHARMACOLOGY
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ISSCC.2013.6487739
dc.description.sourcetitleDigest of Technical Papers - IEEE International Solid-State Circuits Conference
dc.description.volume56
dc.description.page290-291
dc.description.codenDTPCD
dc.identifier.isiutNOT_IN_WOS
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