Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2015.2397593
DC FieldValue
dc.titleInvestigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD
dc.contributor.authorGe, Jia
dc.contributor.authorTang, Muzhi
dc.contributor.authorWong, Johnson Kai Chi
dc.contributor.authorRolf, Arnold Stangl
dc.contributor.authorZhang, Zhenhao
dc.contributor.authorDippell, Torsten
dc.contributor.authorDoerr, Manfred
dc.contributor.authorHohn, Oliver
dc.contributor.authorHuber, Marco
dc.contributor.authorWohlfart, Peter
dc.contributor.authorAberle, Armin Gerhard
dc.contributor.authorMueller, Thomas
dc.date.accessioned2016-04-29T06:06:17Z
dc.date.available2016-04-29T06:06:17Z
dc.date.issued2015
dc.identifier.citationGe, Jia, Tang, Muzhi, Wong, Johnson Kai Chi, Rolf, Arnold Stangl, Zhang, Zhenhao, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin Gerhard, Mueller, Thomas (2015). Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD. IEEE Journal of Photovoltaics 5 (3) : 705-710. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2015.2397593
dc.identifier.issn21563381
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/123446
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/JPHOTOV.2015.2397593
dc.publisherIEEE Electron Devices Society
dc.typeArticle
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1109/JPHOTOV.2015.2397593
dc.description.sourcetitleIEEE Journal of Photovoltaics
dc.description.volume5
dc.description.issue3
dc.description.page705-710
dc.identifier.isiut000353550500001
dc.published.statePublished
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.