Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/121922
Title: CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS
Authors: GAURAV GUPTA
Keywords: NEGF, Topological Insulators, Quantum Transport, Group-IV Monolayer, Dirac-Band Materials, Devices
Issue Date: 29-Jul-2015
Source: GAURAV GUPTA (2015-07-29). CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS. ScholarBank@NUS Repository.
Abstract: The carrier transport investigation via Non-Equilibrium Green Function (NEGF) formalism in Dirac-band materials like Group-IV monolayer (C, Si, Ge, Sn, Pb) and Bi2Se3 three-dimensional (3D) topological insulator (TI) and their devices have been presented. The carrier transport fundamentals would help in understanding of the complex transport physics in these materials and expound on number of conceptual points. Among Group-IV monolayers, for graphene, non-conventional transistor based on electro-optic effect has been investigated, whereas for heavier elements spin-separator and spin-filter has been appraised. For 3D-TI, the transport physics is furthermore applied to explain anomalous observations in the experiments. Moreover, the effect of different type of contacts and scattering mechanisms like acoustic phonons, defects, vacancies and edge roughness has been investigated for 3D-TI. The transport results have been applied to evaluate the feasibility of 3D-TI based devices like local interconnects for replacing Cu and resonant devices for analog oscillators and multipliers.
URI: http://scholarbank.nus.edu.sg/handle/10635/121922
Appears in Collections:Ph.D Theses (Open)

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