GRAPHENE ON FUNCTIONAL SUBSTRATE

Abstract

IN THIS DISSERTATION, WE HAVE EXPLORED USE OF VARIOUS FUNCTIONAL SUBSTRATES FOR ELECTRONIC APPLICATIONS OF GRAPHENE. WE HAVE USED SRTIO3 TO HAVE LARGE DOPING LEVEL FOR LOW VOLTAGE ELECTRONICS. HOWEVER UNEXPECTED INTERFACE EFFECTS SUCH AS ANTI-FERROELECTRIC TYPE HYSTERESIS AND DECREASED DOPING CONSTANTLY LIMIT THE DOPING LEVEL. WE HAVE DEMONSTRATED THAT USE OF ULTRA- THIN HYDROPHOBIC OCTYLTRICHLOROSILANE SUBSTRATES SUCCESSFULLY REVERSE UNEXPECTED AND UNDESIRED ANTI-FERROELECTRIC HYSTERESIS. P(VDF-TRFE) POLYMERIC GATE DIELECTRIC IS LATER USED BOTH AS A SUBSTRATE AND TOP GATE (DEPENDING ON THE THICKNESS OF THE FILM) FOR LOW SHEET RESISTANCE APPLICATIONS. WE CHOOSE THIS MATERIAL DUE TO ITS HIGH REMNANT POLARIZATION. HOWEVER MAJOR CHALLENGE IS TO OVERCOME STABILITY ISSUES WHICH ARE AN AREA THAT WAS NOT EXPLORED PREVIOUSLY. WE HAVE FOUND THAT THE STABILITY DEPENDS ON VARIOUS FACTORS SUCH AS FLATNESS OF THE SUBSTRATE, PURITY OF THE INTERFACE, AND QUALITY OF THE GRAPHENE. BY USING OTHER 2D MAT