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Title: | STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS | Authors: | LIU YI | Keywords: | InAlN/GaN, HEMT, ohmic contact, passivation, device characterizations | Issue Date: | 23-Jan-2015 | Citation: | LIU YI (2015-01-23). STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS. ScholarBank@NUS Repository. | Abstract: | In this work the reduction of access resistance in InAlN/GaN HEMTs was focused. The gold-free Hf/Al/Ta contacts were realized on InAlN/GaN with low contact resistance and low thermal budget. The carrier transport mechanism was also studied for the Hf-based contacts on InAlN/GaN. Compared to the traditional Ti/Al/Ni/Au contacts, the surface roughness and interface between metal and semiconductor were found to be improved for Hf/Al/Ta contacts. With comparable DC output and transfer characteristics to the devices with Ti/Al/Ni/Au contacts, the three-terminal off-state breakdown voltage of InAlN/GaN HEMTs with Hf/Al/Ta contacts was enhanced significantly by ~ 53.5 %. To further reduce the access resistance, LaAlO3 passivation was also examined in InAlN/GaN HEMTs. The results indicated that LaAlO3 passivation can reduce sheet resistance of InAlN/GaN at access region, suppress current collapse and increase maximum drain current and maximum transconductance obviously. | URI: | http://scholarbank.nus.edu.sg/handle/10635/120129 |
Appears in Collections: | Ph.D Theses (Open) |
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