Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/120129
Title: STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
Authors: LIU YI
Keywords: InAlN/GaN, HEMT, ohmic contact, passivation, device characterizations
Issue Date: 23-Jan-2015
Source: LIU YI (2015-01-23). STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS. ScholarBank@NUS Repository.
Abstract: In this work the reduction of access resistance in InAlN/GaN HEMTs was focused. The gold-free Hf/Al/Ta contacts were realized on InAlN/GaN with low contact resistance and low thermal budget. The carrier transport mechanism was also studied for the Hf-based contacts on InAlN/GaN. Compared to the traditional Ti/Al/Ni/Au contacts, the surface roughness and interface between metal and semiconductor were found to be improved for Hf/Al/Ta contacts. With comparable DC output and transfer characteristics to the devices with Ti/Al/Ni/Au contacts, the three-terminal off-state breakdown voltage of InAlN/GaN HEMTs with Hf/Al/Ta contacts was enhanced significantly by ~ 53.5 %. To further reduce the access resistance, LaAlO3 passivation was also examined in InAlN/GaN HEMTs. The results indicated that LaAlO3 passivation can reduce sheet resistance of InAlN/GaN at access region, suppress current collapse and increase maximum drain current and maximum transconductance obviously.
URI: http://scholarbank.nus.edu.sg/handle/10635/120129
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
yliu_phd_thesis.pdf7.59 MBAdobe PDF

OPEN

NoneView/Download

Page view(s)

156
checked on Jan 20, 2018

Download(s)

291
checked on Jan 20, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.