Please use this identifier to cite or link to this item:
Title: Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy
Keywords: molecular beam epitaxy, semiconductor, nanostructures, gallium compounds, III-V materials, photoluminescence
Issue Date: 22-Aug-2014
Source: TUNG KAR HOO PATRICK (2014-08-22). Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy. ScholarBank@NUS Repository.
Abstract: The fabrication of semiconductor nanostructures using self-assembled and templated methods is very popular due to its discrete energy states as a function of its size. Droplet epitaxy (DE) was studied to create lattice-matched nanostructures. Self-assembled GaAs quantum rings (QRs) were fabricated using DE and its growth morphology was studied indirectly from the PL spectrum. Ordered GaAs and InGaAs QRs were then fabricated using a silicon dioxide template and were compared against their self-assembled counterparts. Branching out from lithographic template technique, a method to fabricate an ordered array of template using self-assembly nature of anodic aluminium oxide (AAO) is presented. InGaAs QDs using AAO was demonstrated using migration enhanced epitaxy (MEE). MEE is able to avoid nucleation on AAO template by increasing the diffusion time. The nanofabrication techniques presented in this thesis provides a study that has a potential in the future of semiconductor applications.
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
TungKHP.pdf24.53 MBAdobe PDF



Page view(s)

checked on Mar 9, 2018


checked on Mar 9, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.