Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region

Abstract

As a direct band gap semiconductor capable of emitting infrared light at the 1.55-micron region, InN can be very useful in fibre-optics communications. However, it is difficult to synthesize InN with good crystalline qualities suitable for optoelectronics applications. There is also limited understanding of InN?s electronic processes leading to optical emission. The thesis addresses these research questions with rigorous studies on the growth and material properties of InN.

Optical emission from InN originated from a `band-to-tail? model where degenerate electrons in the conduction band recombine radiatively with photoexcited holes in valence band tails. Auger and Shockley-Read-Hall recombination are thermally-activated processes and result in non-ideal emission efficiencies, with Auger recombination being dominant at low temperatures. Shockley-Read-Hall recombination was effectively reduced by using nanoporous GaN templates during MOCVD growth, which improved the internal quantum efficiency from 3% to over 20%. Smoother material was also achieved in the process.