Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2005.04.040
Title: | Surfactant and impurity properties of antimony on GaAs and GaAs 1-xNx on GaAs [100] by solid source molecular beam epitaxy | Authors: | Cheah, W.K. Fan, W.J. Yoon, S.F. Tan, K.H. Liu, R. Wee, A.T.S. |
Keywords: | GaAsN MBE PL SIMS Surfactant XRD |
Issue Date: | 22-Sep-2005 | Citation: | Cheah, W.K., Fan, W.J., Yoon, S.F., Tan, K.H., Liu, R., Wee, A.T.S. (2005-09-22). Surfactant and impurity properties of antimony on GaAs and GaAs 1-xNx on GaAs [100] by solid source molecular beam epitaxy. Thin Solid Films 488 (1-2) : 56-61. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.04.040 | Abstract: | Low temperature (4.5 K) photoluminescence measurements and two-dimensional [115] high resolution X-ray diffractometry rocking curves of antimony doped III-V-N on GaAs grown by solid source molecular beam epitaxy, show a possible non-radiative recombination defect known as the SbGa heteroantisite and another Sb-related defect peak at 1017 nm (∼1.22 eV). The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb. We find that Sb behaves as an impurity and competes with N for As sites until the surfactant effect commences at 1.733 × 10- 6 Pa. The Sb latency effect which results in a graded Sb composition at the interface was found by secondary ion mass spectroscopy measurements. © 2005 Elsevier B.V. All rights reserved. | Source Title: | Thin Solid Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/116612 | ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2005.04.040 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.