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|Title:||Surfactant and impurity properties of antimony on GaAs and GaAs 1-xNx on GaAs  by solid source molecular beam epitaxy|
|Citation:||Cheah, W.K., Fan, W.J., Yoon, S.F., Tan, K.H., Liu, R., Wee, A.T.S. (2005-09-22). Surfactant and impurity properties of antimony on GaAs and GaAs 1-xNx on GaAs  by solid source molecular beam epitaxy. Thin Solid Films 488 (1-2) : 56-61. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.04.040|
|Abstract:||Low temperature (4.5 K) photoluminescence measurements and two-dimensional  high resolution X-ray diffractometry rocking curves of antimony doped III-V-N on GaAs grown by solid source molecular beam epitaxy, show a possible non-radiative recombination defect known as the SbGa heteroantisite and another Sb-related defect peak at 1017 nm (∼1.22 eV). The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb. We find that Sb behaves as an impurity and competes with N for As sites until the surfactant effect commences at 1.733 × 10- 6 Pa. The Sb latency effect which results in a graded Sb composition at the interface was found by secondary ion mass spectroscopy measurements. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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