Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/116534
Title: Preparation and investigation of GOI material by using smart-cut technology
Authors: Zhan, D.
Ma, X.-B.
Liu, W.-L.
Zhu, M. 
Song, Z.-T.
Keywords: Bonding
GOI
Smart-cut
Issue Date: Jun-2007
Source: Zhan, D.,Ma, X.-B.,Liu, W.-L.,Zhu, M.,Song, Z.-T. (2007-06). Preparation and investigation of GOI material by using smart-cut technology. Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices 13 (3) : 207-212. ScholarBank@NUS Repository.
Abstract: The surface morphology of hydrogen implanted Ge wafers was investigated. Different from that of hydrogen implanted Si wafer, no obvious blisters were observed, but the whole top Ge layer departed from substrate. Germanium-on-insulator (GOI) materials have been fabricated successfully by using modified smart-cut technology, which includes moderate H+ dose implantation, special cleaning process of Ge wafer, low temperature wafer bonding and subsequent thermal treatment. Scanning electron microscope (SEM), atomic force microscope (AFM) and four-crystal X-ray diffraction have been used to characterize microstructure of GOI materials. The results demonstrate that the top Ge layer of GOI has good single crystal quality, and the interface between Ge and buried silicon dioxide is sharp and uniform.
Source Title: Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/116534
ISSN: 10074252
Appears in Collections:Staff Publications

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