Preparation and investigation of GOI material by using smart-cut technology

Abstract

The surface morphology of hydrogen implanted Ge wafers was investigated. Different from that of hydrogen implanted Si wafer, no obvious blisters were observed, but the whole top Ge layer departed from substrate. Germanium-on-insulator (GOI) materials have been fabricated successfully by using modified smart-cut technology, which includes moderate H+ dose implantation, special cleaning process of Ge wafer, low temperature wafer bonding and subsequent thermal treatment. Scanning electron microscope (SEM), atomic force microscope (AFM) and four-crystal X-ray diffraction have been used to characterize microstructure of GOI materials. The results demonstrate that the top Ge layer of GOI has good single crystal quality, and the interface between Ge and buried silicon dioxide is sharp and uniform.