Please use this identifier to cite or link to this item:
|Title:||Large tensile-strain-induced monoclinic MB phase in BiFeO 3 epitaxial thin films on a PrScO3 substrate|
|Source:||Chen, Z., Qi, Y., You, L., Yang, P., Huang, C.W., Wang, J., Sritharan, T., Chen, L. (2013-08-30). Large tensile-strain-induced monoclinic MB phase in BiFeO 3 epitaxial thin films on a PrScO3 substrate. Physical Review B - Condensed Matter and Materials Physics 88 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.88.054114|
|Abstract:||Crystal and domain structures, and ferroelectric properties of tensile-strained BiFeO3 epitaxial films grown on orthorhombic (110)o PrScO3 substrates were investigated. All films possess a MB-type monoclinic structure with 109 stripe domains oriented along the [1̄10]o direction. For films thicknesses less than ∼40 nm, the presence of well-ordered domains is proved by the detection of satellite peaks in synchrotron x-ray diffraction studies. For thicker films, only the Bragg reflections from tilted domains were detected. This is attributed to the broader domain size distribution in thicker films. Using planar electrodes, the in-plane polarization of the MB phase is determined to be ∼85 μC/cm2, which is much larger than that of compressive-strained BiFeO3 films. Our results further reveal that the substrate monoclinic distortion plays an important role in determining the stripe domain formation of the rhombohedral ferroic epitaxial thin films, which sheds light on the problem of understanding elastic domain structure evolution in many other functional oxide thin films as well. © 2013 American Physical Society.|
|Source Title:||Physical Review B - Condensed Matter and Materials Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 15, 2018
WEB OF SCIENCETM
checked on Jan 30, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.