Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2005.851923
Title: GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
Authors: Cheah, W.K.
Fan, W.J.
Yoon, S.F.
Zhang, D.H.
Ng, B.K.
Loke, W.K.
Liu, R. 
Wee, A.T.S. 
Keywords: InGaAsNSb semiconductors
Molecular beam epitaxy (MBE)
p-i-n photodiodes
Responsivity
Issue Date: Sep-2005
Citation: Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S. (2005-09). GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer. IEEE Photonics Technology Letters 17 (9) : 1932-1934. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2005.851923
Abstract: GaAs-based double-heterojunction p-i-n photodetectors using InzGa1-zAs1-x-yNx Sby in the i layer is fabricated for the first time using the solid source molecular beam epitaxy growth method. The surfactant effect generated by the presence of Sb in this material allows thick high-quality dilute nitride material growth. A peak responsivity of ∼0.29 A/W, corresponding to quantum efficiencies of 38% is attained between 0.9 and 1.1 μm from the best p-i-n device. The cutoff wavelength reaches ε11.4 μm and the dark current is ε10.43 mA/cm2 at a reverse bias of 2 V. A Sb-free p-i-n device consisting of InGaAsN-GaAs is also fabricated to compare the device performance with the InGaAsNSb-GaAs p-i-n devices. © 2005 IEEE.
Source Title: IEEE Photonics Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/116360
ISSN: 10411135
DOI: 10.1109/LPT.2005.851923
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