Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10832-006-9921-1
Title: Structural properties and dopant-modified bandgap energies of Ba 0.5Sr0.5TiO3 thin films grown on LaAlO 3 substrates
Authors: Zheng, Y.B.
Wang, S.J.
Kong, L.B. 
Tripathy, S.
Huan, A.C.H.
Ong, C.K. 
Keywords: Band structure
Dopants
Ferroelectric thin films
Issue Date: Jul-2006
Source: Zheng, Y.B., Wang, S.J., Kong, L.B., Tripathy, S., Huan, A.C.H., Ong, C.K. (2006-07). Structural properties and dopant-modified bandgap energies of Ba 0.5Sr0.5TiO3 thin films grown on LaAlO 3 substrates. Journal of Electroceramics 16 (4) : 571-574. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-006-9921-1
Abstract: Ba0.5Sr0.5TiO3 thin films doped with different concentration of Ti, Mg and Al dopants were prepared by pulsed laser deposition technique on LaAlO3 substrates. The crystalline properties of these doped thin films were studied using X-ray diffraction, micro-Raman scattering, atomic force microscopy, and transmission electron microscopy. The bandgap energies of BST thin films are determined from the transmission and absorption measurements by the ultraviolet-visible spectrophotometer. It was found out that the bandgap energies of the doped BST thin films depend strongly on the dopant concentration. © Springer Science + Business Media, LLC 2006.
Source Title: Journal of Electroceramics
URI: http://scholarbank.nus.edu.sg/handle/10635/116126
ISSN: 13853449
DOI: 10.1007/s10832-006-9921-1
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