Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/116064
Title: Device reliability and failure mechanisms related to gate dielectrics and interconnects
Authors: Radhakrishnan, M.K. 
Issue Date: 2004
Citation: Radhakrishnan, M.K. (2004). Device reliability and failure mechanisms related to gate dielectrics and interconnects. Proceedings of the IEEE International Conference on VLSI Design 17 : 805-808. ScholarBank@NUS Repository.
Abstract: As dimensions shrink, the reliability considerations become more trivial. In deep sub-micron devices, at certain stages of processing, even an atomic layer variation can be a defect. Studies on the physical failure mechanisms in sub-micron devices reveals that the major reliability concerns are the same as that poses before scaling. A comprehensive overview on the reliability issues in ultra thin gate dielectrics and copper interconnect material is given to link how the physical effects on devices can be a threat to long-term reliability.
Source Title: Proceedings of the IEEE International Conference on VLSI Design
URI: http://scholarbank.nus.edu.sg/handle/10635/116064
ISSN: 10639667
Appears in Collections:Staff Publications

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