Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mseb.2005.11.009
Title: XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si
Authors: Yan, L. 
Pan, J.S.
Ong, C.K. 
Keywords: Co-doped SnO2
Diluted magnetic semiconductor (DMS)
Pulsed laser deposition (PLD)
XPS
Issue Date: 15-Mar-2006
Citation: Yan, L., Pan, J.S., Ong, C.K. (2006-03-15). XPS studies of room temperature magnetic Co-doped SnO2 deposited on Si. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 128 (1-3) : 34-36. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2005.11.009
Abstract: Five atomic percentage Co-doped SnO2 (Sn0.95Co 0.05O2) thin films have been deposited on (1 0 0) Si substrates by pulsed laser deposition. The Sn0.95Co 0.05O2 thin films with rutile-structure on (1 0 0) Si substrates could be well deposited under the appreciate deposition parameters. The Sn0.95Co0.05O2 thin film has good room temperature magnetic property with the saturated magnetic moment (ms) of 1.3 μB/Co at 293 K. The X-ray photoelectron spectroscopy (XPS) measurements for the Sn0.95Co0.05O2 thin film on Si predicated that Co has oxidation states of +3. The good magnetic property of the Co-doped SnO2 may be deduced the exchange between Co 3+ and Co3+ through the oxygen vacancy. © 2005 Elsevier B.V. All rights reserved.
Source Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/116033
ISSN: 09215107
DOI: 10.1016/j.mseb.2005.11.009
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