Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1509100
Title: Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study
Authors: Xie, X. 
Loh, K.P. 
Issue Date: 1-Nov-2002
Citation: Xie, X., Loh, K.P. (2002-11-01). Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study. Journal of Applied Physics 92 (9) : 5173-5176. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1509100
Abstract: Silicon oxide ultrathin films grown on silicon carbide (6H-SiC) by plasma hydrogenation have been studied using ultrashallow depth profiling with time-of-flight secondary ion mass spectrometry. Plasma hydrogenation gives rise to an epitaxial 3 × 3 R30° silicate structure on 6H-SiC(0001) and 6H-SiC(0001̄). By selecting appropriate sputtering conditions, an ultrathin and atomically abrupt interface delineating the boundary between the silicate epilayer (SiO +,Si 2O +, and SiO 3 -,SiO 2 -) and bulk silicon carbide (SiC +) was observed on both C(0001̄) and Si(0001) faces. Differences in the sputtering profile between the C and Si faces suggest an enrichment of the interface stoichiometry by Si and O on the Si face. Our results support the structural models of the silicate on the C and Si-face 6H-SiC(0001) proposed by Starke [Appl. Phys. Lett. 74, 1084 (1999); J. Vac. Sci. Technol. A 17, 688 (1999)]. © 2002 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/116018
ISSN: 00218979
DOI: 10.1063/1.1509100
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