Please use this identifier to cite or link to this item: https://doi.org/10.1002/mop.20143
Title: The attenuation and slow-wave characteristics of an inverted embedded (IEM) metal-insulator semiconductor (MIS) microstrip line
Authors: Yin, W.Y. 
Dong, X.T. 
Keywords: Attenuation
Distributed parameters
Inverted embedded metal-insulator- semiconductor microstrip
Slow-wave factor (SWF)
Issue Date: 5-Jun-2004
Citation: Yin, W.Y., Dong, X.T. (2004-06-05). The attenuation and slow-wave characteristics of an inverted embedded (IEM) metal-insulator semiconductor (MIS) microstrip line. Microwave and Optical Technology Letters 41 (5) : 366-369. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.20143
Abstract: The attenuation and slow-wave characteristics in an inverted embedded metal-insulator-semiconductor (IEM-MIS) microstrip line are investigated in this paper, based on the extracted frequency-dependent distributed parameters, that is, per-unit-length series resistance and inductance, shunt capacitance, and conductance of the structure. Parametric studies are performed to show the combined effects of different parameters, such as strip thickness, width, conductivity, embedding depth, and silicon conductivity and its thickness, on the mode attenuation constant and slawwave factor (SWF). © 2004 Wiley Periodicals, Inc.
Source Title: Microwave and Optical Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/115979
ISSN: 08952477
DOI: 10.1002/mop.20143
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