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|Title:||Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors|
|Citation:||Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K. (2003-10-06). Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters 83 (14) : 2940-2942. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1616195|
|Abstract:||Size-difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors (MOSFET) was discussed. It was found that physical dimensions formed during gate-dielectrics-breakdown-induced epitaxy (DBIE) is dependent on transistor type. Results also showed that DBIE in n-MOSFET are almost 2 times larger than in the p-MOSFET.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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