Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1616195
Title: Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
Authors: Pey, K.L.
Tung, C.H.
Tang, L.J.
Lin, W.H.
Radhakrishnan, M.K. 
Issue Date: 6-Oct-2003
Citation: Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K. (2003-10-06). Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters 83 (14) : 2940-2942. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1616195
Abstract: Size-difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors (MOSFET) was discussed. It was found that physical dimensions formed during gate-dielectrics-breakdown-induced epitaxy (DBIE) is dependent on transistor type. Results also showed that DBIE in n-MOSFET are almost 2 times larger than in the p-MOSFET.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/115288
ISSN: 00036951
DOI: 10.1063/1.1616195
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

27
checked on Oct 18, 2018

WEB OF SCIENCETM
Citations

18
checked on Oct 10, 2018

Page view(s)

71
checked on Oct 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.