Please use this identifier to cite or link to this item:
|Title:||Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors|
|Citation:||Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K. (2003-10-06). Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters 83 (14) : 2940-2942. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1616195|
|Abstract:||Size-difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors (MOSFET) was discussed. It was found that physical dimensions formed during gate-dielectrics-breakdown-induced epitaxy (DBIE) is dependent on transistor type. Results also showed that DBIE in n-MOSFET are almost 2 times larger than in the p-MOSFET.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 20, 2018
checked on Jul 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.