Please use this identifier to cite or link to this item:
Title: Morphology controllable ZnO growth on facet-controlled epitaxial lateral overgrown GaN/sapphire templates
Authors: Zhou, H.L.
Chua, S.J.
Pan, H. 
Zhu, Y.W. 
Osipowicz, T. 
Liu, W.
Zang, K.Y.
Feng, Y.P. 
Sow, C.H. 
Issue Date: 3-May-2007
Citation: Zhou, H.L., Chua, S.J., Pan, H., Zhu, Y.W., Osipowicz, T., Liu, W., Zang, K.Y., Feng, Y.P., Sow, C.H. (2007-05-03). Morphology controllable ZnO growth on facet-controlled epitaxial lateral overgrown GaN/sapphire templates. Journal of Physical Chemistry C 111 (17) : 6405-6410. ScholarBank@NUS Repository.
Abstract: High-quality epitaxial ZnO layers grown on facet-controlled epitaxial lateral overgrown (FACELO) GaN/sapphire templates were achieved by an evaporation-physical transport-condensation method. The ZnO/FACELO GaN heterostructures showed a substantial improvement in the crystalline quality with a lower defect density and excellent photoluminescence emission. The effects of the growth temperature and oxygen flow rate on the morphology of ZnO were systematically studied. The determining factors for the formation of different morphologies were found to be gas-phase supersaturation and the surface energy of the growing planes. In addition, the lattice matching between the ZnO and GaN leads to the improvement of the electric andjoptical properties. With such kind of perfect ZnO/GaN heterostructure interfaces obtained on the semipolar (1122) surface, the new opportunities for the fabrication of hybrid ZnO/GaN optoelectronic devices on sapphire are proposed. © 2007 American Chemical Society.
Source Title: Journal of Physical Chemistry C
ISSN: 19327447
DOI: 10.1021/jp067682i
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 21, 2019


checked on Jan 2, 2019

Page view(s)

checked on Dec 28, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.