Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2986861
Title: Enhanced ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal
Authors: Wong, A.S.W.
Ho, G.W. 
Chia, D.Z.
Issue Date: 2008
Citation: Wong, A.S.W., Ho, G.W., Chia, D.Z. (2008). Enhanced ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal. ECS Transactions 16 (10) : 989-997. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2986861
Abstract: We describe the formation of a ferromagnetic Fe-rich germanide layer by a two-step process involving magnetron sputtering and anneal. A thin epitaxial iron (epi-Fe) film is deposited on Ge (001) substrate and then annealed at 275 °C in nitrogen inducing germanide formation. Surprisingly, we observe an enhancement in saturation magnetization in germanide films. Secondary ion mass spectroscopy and x-ray diffraction confirm the formation of a thin Fe-rich germanide layer whilst high resolution transmission suggest that it can be Fe3Ge. ©The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/114556
ISBN: 9781566776561
ISSN: 19385862
DOI: 10.1149/1.2986861
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