Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/114541
Title: An improved but reliable model for MESFET parasitic capacitance extraction
Authors: Ooi, B.L. 
Ma, J.Y.
Keywords: Small Signal Equivalent Circuit
Issue Date: 2003
Citation: Ooi, B.L.,Ma, J.Y. (2003). An improved but reliable model for MESFET parasitic capacitance extraction. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers : 567-570. ScholarBank@NUS Repository.
Abstract: The conventional parasitic capacitance extraction always produces bias-dependent Cpd, even though from the underlying physic, the parasitic capacitance is known to be bias-independent. In this paper, an improved model is thus proposed to evaluate the parasitic capacitances of GaAs MESFET transistor from the cold-FET S-parameters measurement. The resulting Cpd is found to be independent of Vgs, when V gs
Source Title: IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/114541
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