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|Title:||An improved but reliable model for MESFET parasitic capacitance extraction|
|Authors:||Ooi, B.L. |
|Keywords:||Small Signal Equivalent Circuit|
|Citation:||Ooi, B.L.,Ma, J.Y. (2003). An improved but reliable model for MESFET parasitic capacitance extraction. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers : 567-570. ScholarBank@NUS Repository.|
|Abstract:||The conventional parasitic capacitance extraction always produces bias-dependent Cpd, even though from the underlying physic, the parasitic capacitance is known to be bias-independent. In this paper, an improved model is thus proposed to evaluate the parasitic capacitances of GaAs MESFET transistor from the cold-FET S-parameters measurement. The resulting Cpd is found to be independent of Vgs, when V gs|
|Source Title:||IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers|
|Appears in Collections:||Staff Publications|
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