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|Title:||Activation of beryllium-implanted GaN by two-step annealing|
Tan, Leng Seow
Chua, Soo Jin
|Source:||Sun, Yuejun,Tan, Leng Seow,Chua, Soo Jin,Prakash, Savarimuthu (2000). Activation of beryllium-implanted GaN by two-step annealing. Materials Research Society Symposium - Proceedings 595 : W3.82.1 - W3.82.7. ScholarBank@NUS Repository.|
|Abstract:||For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1×1013 cm-2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of approx. 100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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