Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/114538
Title: Activation of beryllium-implanted GaN by two-step annealing
Authors: Sun, Yuejun
Tan, Leng Seow 
Chua, Soo Jin 
Prakash, Savarimuthu 
Issue Date: 2000
Source: Sun, Yuejun,Tan, Leng Seow,Chua, Soo Jin,Prakash, Savarimuthu (2000). Activation of beryllium-implanted GaN by two-step annealing. Materials Research Society Symposium - Proceedings 595 : W3.82.1 - W3.82.7. ScholarBank@NUS Repository.
Abstract: For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1×1013 cm-2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of approx. 100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/114538
ISSN: 02729172
Appears in Collections:Staff Publications

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