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https://doi.org/10.1016/j.sse.2010.10.005
Title: | A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET | Authors: | Shen, C. Yang, L.-T. Samudra, G. Yeo, Y.-C. |
Keywords: | Band-to-band tunneling Modeling TCAD simulation Tunneling FET |
Issue Date: | Mar-2011 | Citation: | Shen, C., Yang, L.-T., Samudra, G., Yeo, Y.-C. (2011-03). A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET. Solid-State Electronics 57 (1) : 23-30. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2010.10.005 | Abstract: | A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this paper. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics. © 2010 Elsevier Ltd. All rights reserved. | Source Title: | Solid-State Electronics | URI: | http://scholarbank.nus.edu.sg/handle/10635/114484 | ISSN: | 00381101 | DOI: | 10.1016/j.sse.2010.10.005 |
Appears in Collections: | Staff Publications |
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