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|Title:||Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb + and Se + ion implantation into SiO 2|
In-situ ion implantation
Solar cell technology
|Citation:||Markwitz, A., Carder, D.A., Hopf, T., Kennedy, J., Chan, T.K., Mücklich, A., Osipowicz, T. (2012-02-15). Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb + and Se + ion implantation into SiO 2. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 273 : 199-202. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2011.07.075|
|Abstract:||First results obtained from electron beam annealed sequentially implanted Pb + (29 keV) and Se + (25 keV) ions into a SiO 2 matrix are presented. Key results from Rutherford backscattering spectrometry and transmission electron microscopy investigations are: (1) Pb and Se atoms are found to bond in the SiO 2 matrix during implantation, forming into nanoclusters even prior to the annealing step, (2) Pb and Se atoms are both present in the sample after annealing at high temperature (T = 760 °C, t = 45 min) and form into PbSe nanoclusters of varying sizes within the implanted region, and (3) the broader concentration profile of implanted Se creates a number of secondary features throughout the SiO 2 film, including voids and hollow shell Se nanoclusters. A sequential ion implantation approach has several advantages: selected areas of nanocrystals can be formed for integrated circuits, the technique is compatible with present silicon processing technology, and the nanocrystals are embedded in an inert matrix - making them highly durable. In addition, a higher concentration of nanocrystals is possible than with conventional glass melt techniques. © 2011 Elsevier B.V. All rights reserved.|
|Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Appears in Collections:||Staff Publications|
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