Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/113278
Title: High-mobility Germanium-Tin Field-Effect Transistors: Surface Passivation, Contact, and Doping Technologies
Authors: WANG LANXIANG
Keywords: High mobility, germanium-tin, filed-effect transistors, surface passivation, contact technology, doping technology
Issue Date: 26-Jun-2014
Citation: WANG LANXIANG (2014-06-26). High-mobility Germanium-Tin Field-Effect Transistors: Surface Passivation, Contact, and Doping Technologies. ScholarBank@NUS Repository.
Abstract: This thesis aims to address various challenges in realizing high-mobility Ge1-xSnx MOSFETs. For Ge1-xSnx p-MOSFETs, (NH4)2S passivation was first demonstrated to achieve high-quality gate stack. A peak mobility of 509 cm2/V?s was obtained for the (NH4)2S-passivated transistors. Next, incorporation of Pt during the formation of Ni-stanogermanide was exploited to improve the thermal robustness by suppressing agglomeration during solid-state reactions between Ni and Ge0.947Sn0.053 at temperatures of 450 ?C and above. To realize high-performance Ge1-xSnx n-MOSFETs, high n-type dopant activation for low S/D resistance is critical. Activation temperature as low as 400 ?C was demonstrated to obtain active doping concentration of 2.1 ? 1019 cm-3 for P+-implanted Ge0.976Sn0.024. In addition, implant at elevated temperature of 400 ?C was explored to maintain the single-crystallinity of Ge0.976Sn0.024 during implant and achieve a lower contact resistivity after RTA at 450 ?C as compared with the room-temperature implant.
URI: http://scholarbank.nus.edu.sg/handle/10635/113278
Appears in Collections:Ph.D Theses (Open)

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