Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6744372
Title: Excellent surface passivation of silicon at low cost: Atomic layer deposited aluminium oxide from solar grade TMA
Authors: Lin, F.
Nandakumar, N.
Dielissen, B.
Gortzen, R.
Hoex, B. 
Keywords: Aluminium oxide
Atomic layer deposition
Cost of ownership
Solar grade
Surface passivation
TMA
Issue Date: 2013
Source: Lin, F.,Nandakumar, N.,Dielissen, B.,Gortzen, R.,Hoex, B. (2013). Excellent surface passivation of silicon at low cost: Atomic layer deposited aluminium oxide from solar grade TMA. Conference Record of the IEEE Photovoltaic Specialists Conference : 1268-1271. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744372
Abstract: In this work, we investigated the surface passivation performance of thermal atomic layer deposited Al2O3 films using two different grades of trimethylaluminum (TMA). All films were grown on the InPassion Lab tool from SoLayTec. We demonstrate that the surface passivation quality is not compromised by the higher impurity concentration in the cheaper solar grade TMA. Excellent passivation on both p- and n-type silicon surfaces was obtained in a wide process window for samples deposited using both grades of TMA. Remarkably, even a better passivation quality was obtained by the solar grade TMA, especially on n-type samples. It is therefore demonstrated that excellent surface passivation by ALD Al2O3 films can be realized using a lower cost precursor. © 2013 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/113257
ISBN: 9781479932993
ISSN: 01608371
DOI: 10.1109/PVSC.2013.6744372
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