Please use this identifier to cite or link to this item:
|Title:||C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy|
|Authors:||Hoex, B. |
Electron energy loss spectroscopy
|Source:||Hoex, B.,Bosman, M.,Nandakumar, N.,Kessels, W.M.M. (2013). C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy. Conference Record of the IEEE Photovoltaic Specialists Conference : 3333-3336. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6745164|
|Abstract:||In this work the mechanism of c-Si surface passivation by Al 2O3 films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al2O3 interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al2O3. © 2013 IEEE.|
|Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 13, 2018
checked on Feb 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.