Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6745164
Title: C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy
Authors: Hoex, B. 
Bosman, M.
Nandakumar, N.
Kessels, W.M.M.
Keywords: Aluminum oxide
Electron energy loss spectroscopy
Fixed charge
Surface passivation
Issue Date: 2013
Source: Hoex, B.,Bosman, M.,Nandakumar, N.,Kessels, W.M.M. (2013). C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy. Conference Record of the IEEE Photovoltaic Specialists Conference : 3333-3336. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6745164
Abstract: In this work the mechanism of c-Si surface passivation by Al 2O3 films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al2O3 interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al2O3. © 2013 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/113255
ISBN: 9781479932993
ISSN: 01608371
DOI: 10.1109/PVSC.2013.6745164
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