Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssr.201308081
Title: Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy
Authors: Hoex, B. 
Bosman, M.
Nandakumar, N.
Kessels, W.M.M.
Keywords: Al2O3
Electron energy loss spectroscopy
Silicon
Solar cells
Surface passivation
Wafers
Issue Date: Nov-2013
Source: Hoex, B., Bosman, M., Nandakumar, N., Kessels, W.M.M. (2013-11). Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy. Physica Status Solidi - Rapid Research Letters 7 (11) : 937-941. ScholarBank@NUS Repository. https://doi.org/10.1002/pssr.201308081
Abstract: The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially-resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2-like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c-Si surface passivation by Al2O3. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially-resolved electron energy loss spectroscopy. The results confirm the presence of an interfacial SiO2-like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c-Si surface passivation by Al2O3. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi - Rapid Research Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/113250
ISSN: 18626254
DOI: 10.1002/pssr.201308081
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