Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0039-6028(03)00149-3
Title: Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces
Authors: Pan, J.S.
Tok, E.S. 
Huan, C.H.A. 
Liu, R.S. 
Chai, J.W.
Ong, W.J.
Toh, K.C.
Keywords: Atomic force microscopy
Cobalt
Diffusion and migration
Silicides
X-ray photoelectron spectroscopy
Issue Date: 10-Jun-2003
Source: Pan, J.S., Tok, E.S., Huan, C.H.A., Liu, R.S., Chai, J.W., Ong, W.J., Toh, K.C. (2003-06-10). Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces. Surface Science 532-535 : 639-644. ScholarBank@NUS Repository. https://doi.org/10.1016/S0039-6028(03)00149-3
Abstract: In situ X-ray photoelectron spectroscopy (XPS) reveals that deposited Co atoms at room temperature react with Si at the growth front to form a thin "CoSi2-like" layer on both clean and hydrogen passivated Si(0 0 1) and Si(1 1 1) surfaces. Improvement in the silicides crystallinity upon annealing was characterised by an appreciable decrease in the full width at half maximum of the Co 2p3/2 XPS spectra and a shift in binding energy towards Co in the bulk CoSi2 crystal structure. Unlike the Si(0 0 1) substrate, the presence of hydrogen on the Si(1 1 1) surface appears to delay the decrease in the peak area ratio of Co 2p3/2/Si 2p as annealing temperatures increase. Ex situ surface morphology imaged by atomic force microscopy suggests a reduced adatom mobility on the Co/H-passivated Si surface compared to the Co/clean Si surface, as evidenced by a higher and smaller size CoSi2 islands density observed on Co deposited/H-terminated Si surfaces after annealing to 700 °C. © 2003 Elsevier Science B.V. All rights reserved.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/113116
ISSN: 00396028
DOI: 10.1016/S0039-6028(03)00149-3
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