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https://doi.org/10.1016/S0039-6028(03)00149-3
Title: | Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces |
Authors: | Pan, J.S. Tok, E.S. Huan, C.H.A. Liu, R.S. Chai, J.W. Ong, W.J. Toh, K.C. |
Keywords: | Atomic force microscopy Cobalt Diffusion and migration Silicides X-ray photoelectron spectroscopy |
Issue Date: | 10-Jun-2003 |
Citation: | Pan, J.S., Tok, E.S., Huan, C.H.A., Liu, R.S., Chai, J.W., Ong, W.J., Toh, K.C. (2003-06-10). Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces. Surface Science 532-535 : 639-644. ScholarBank@NUS Repository. https://doi.org/10.1016/S0039-6028(03)00149-3 |
Abstract: | In situ X-ray photoelectron spectroscopy (XPS) reveals that deposited Co atoms at room temperature react with Si at the growth front to form a thin "CoSi2-like" layer on both clean and hydrogen passivated Si(0 0 1) and Si(1 1 1) surfaces. Improvement in the silicides crystallinity upon annealing was characterised by an appreciable decrease in the full width at half maximum of the Co 2p3/2 XPS spectra and a shift in binding energy towards Co in the bulk CoSi2 crystal structure. Unlike the Si(0 0 1) substrate, the presence of hydrogen on the Si(1 1 1) surface appears to delay the decrease in the peak area ratio of Co 2p3/2/Si 2p as annealing temperatures increase. Ex situ surface morphology imaged by atomic force microscopy suggests a reduced adatom mobility on the Co/H-passivated Si surface compared to the Co/clean Si surface, as evidenced by a higher and smaller size CoSi2 islands density observed on Co deposited/H-terminated Si surfaces after annealing to 700 °C. © 2003 Elsevier Science B.V. All rights reserved. |
Source Title: | Surface Science |
URI: | http://scholarbank.nus.edu.sg/handle/10635/113116 |
ISSN: | 00396028 |
DOI: | 10.1016/S0039-6028(03)00149-3 |
Appears in Collections: | Staff Publications |
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